Fin-based rf diodes

ABSTRACT

Methods for forming a fin-based RF diode with improved performance characteristics and the resulting devices are disclosed. Embodiments include forming fins over a substrate, separated from each other, each fin having a lower portion and an upper portion; forming STI regions over the substrate, between the lower portions of adjacent fins; implanting the lower portion of each fin with a first-type dopant; implanting the upper portion of each fin, above the STI region, with the first-type dopant; forming a junction region around a depletion region and along exposed sidewalls and a top surface of the upper portion of each fin; and forming a contact on exposed sidewalls and a top surface of each junction region.

RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.15/218,318, filed Jul. 25, 2016, entitled “FIN-BASED RF DIODES”, whichis incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to designing and fabricatingintegrated circuit (IC) devices. The present disclosure is particularlyapplicable to radio frequency (RF) diodes in fin-type devices,particularly for the 14 nanometer (nm) technology node and beyond.

BACKGROUND

A diode may be switched from a conducting state (forward-bias) to anon-conducting (reverse-bias) state. The speed at which the switchingcan occur may be limited by the time it takes to remove or addelectrical charge to/from the depletion region of the diode. The timemay be based on two parameters: the lifetime of the carriers, τn and τp,and the capacitance of the junction area. In the switching process,excess minority carriers (holes in the n region and electrons in the pregion) which exist under forward-bias have to “recombine away” throughthe depletion region. Moreover, a larger junction area allows for alarger current to flow, and the series resistance drops. Conventionalfin-based diodes, formed by growing embedded silicon germanium (eSiGe)at the top of p+ fins, with the p+/n-well junction at the interfacebetween the fin and the eSiGe, suffer from non-ideality and leakage,among other things. The junction can be optimized by making the entirefin of grown eSiGe. The optimized diode has low leakage current and anexcellent ideality range, even at increased temperatures.

RF diodes have characteristics that make them particularly attractive inIC devices. For example, an RF diode has an increased depletion regionwidth over a conventional diode, which leads to lowering of capacitance.In addition, for small signals at high frequencies the stored carrierswithin the intrinsic layer are not completely swept by the RF signal orrecombined (due to a large Fin height region). At such frequencies thereis no rectification or distortion, and the RF diode characteristic isthat of a linear resistor, which introduces no distortion orrectification. The RF diode resistance is governed by the DC biasapplied. In this way it is possible to use the device as an effective RFswitch or variable resistor for an attenuator producing far lessdistortion than ordinary PN junction diodes. However, RF diodesimplemented in fin-type devices not only need to meet performancecharacteristics such as leakage current, ideality, and breakdownvoltage, but also need to prevent increases in parasitic resistance orcapacitance. With scaling down of IC devices, the fin width is reduced,thereby reducing the junction area in reverse biasing mode andincreasing parasitic capacitance and resistance.

Therefore, a need exists for methodology enabling fabrications ofsmaller fin-based diodes with low leakage current and ideality as wellas low capacitance and carrier storage and increased current, and theresulting devices.

SUMMARY

An aspect of the present disclosure is a method for forming a fin-basedRF diode with improved performance characteristics.

Another aspect of the present disclosure is a device including afin-based RF diode with improved performance characteristics.

Additional aspects and other features of the present disclosure will beset forth in the description which follows and in part will be apparentto those having ordinary skill in the art upon examination of thefollowing or may be learned from the practice of the present disclosure.The advantages of the present disclosure may be realized and obtained asparticularly pointed out in the appended claims.

According to the present disclosure some technical effects may beachieved in part by a method including forming fins over a substrate,separated from each other, each fin having a lower portion and an upperportion; forming shallow trench isolation (STI) regions over thesubstrate, between the lower portions of adjacent fins; implanting thelower portion of each fin with a first-type dopant; implanting the upperportion of each fin, above the STI region, with the first-type dopant;forming a junction region around a depletion region and along exposedsidewalls and a top surface of the upper portion of each fin; andforming a contact on exposed sidewalls and a top surface of eachjunction region.

In one aspect, the first-type dopant includes a p-type dopant.

Another aspect includes forming the junction region by plasma doping orwith an energy of 0.1 to 0.5 KeV.

One aspect includes implanting the lower portion of each fin to a higherconcentration level of the first-type dopant than the upper portion ofeach fin.

An additional aspect includes forming the upper portion of each fin witha top surface narrower than a bottom surface.

A further aspect includes forming an active depletion region between thedepletion region and the lower portion of each fin.

Another aspect includes increasing a forward current capacity byincreasing a concentration level of the diode cathode dopant.

One aspect includes increasing a forward current capacity by increasingan area of the junction region.

A further aspect includes forming the junction region by implanting theexposed sidewalls and the top surface of each fin with a diode cathodedopant.

An additional aspect includes forming a layer of silicide material onthe exposed sidewalls and the top surface of each fin for forming thejunction region.

Another aspect includes reducing a charge capacitance in the depletionregion by reducing a size of the depletion region.

Another aspect of the present disclosure includes a device including:fins over a substrate, separated from each other, each fin having alower portion and an upper portion; shallow trench isolation (STI)regions over the substrate, between the lower portions of adjacent fins;the lower portion of each fin implanted with a first-type dopant; theupper portion of each fin, above the STI region, implanted with thefirst-type dopant; a junction region around a depletion region and alongexposed sidewalls and a top surface of the upper portion of each fin;and a contact on a top surface of each junction region.

In one aspect, the first-type dopant includes a p-type dopant.

In another aspect, the lower portion of each fin is implanted with thefirst-type dopant to a higher concentration level than the upper portionof each fin.

In a further aspect, the upper portion of each fin has a top surfacenarrower than a bottom surface.

Another aspect includes an active depletion region between the depletionregion and the lower portion of each fin.

In an additional aspect, the junction region, including the exposedsidewalls and the top surface of each fin, is implanted with a diodecathode dopant.

In one aspect, the junction region includes a layer of silicide gatematerial on the exposed sidewalls and the top surface of each fin.

Additional aspects and technical effects of the present disclosure willbecome readily apparent to those skilled in the art from the followingdetailed description wherein embodiments of the present disclosure aredescribed simply by way of illustration of the best mode contemplated tocarry out the present disclosure. As will be realized, the presentdisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects, all without departing from the present disclosure.Accordingly, the drawings and description are to be regarded asillustrative in nature, and not as restrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawing and in whichlike reference numerals refer to similar elements and in which:

FIG. 1A illustrates a top view of a layout of Fin-based RF diodes, inaccordance with an exemplary embodiment; and

FIGS. 1B through 1G illustrate cross-sectional views of a process flowfor forming Fin-based RF diodes, in accordance with an exemplaryembodiment.

DETAILED DESCRIPTION

For the purposes of clarity, in the following description, numerousspecific details are set forth to provide a thorough understanding ofexemplary embodiments. It should be apparent, however, that exemplaryembodiments may be practiced without these specific details or with anequivalent arrangement. In other instances, well-known structures anddevices are shown in a block diagram form in order to avoidunnecessarily obscuring exemplary embodiments. In addition, unlessotherwise indicated, all numbers expressing quantities, ratios, andnumerical properties of ingredients, reaction conditions, and so forthused in the specification and claims are to be understood as beingmodified in all instances by the term “about.”

The present disclosure addresses the problems of reduced junction areaand increased parasitic resistance and capacitance attendant uponscaling down fin-based RF diodes. The present disclosure addresses andsolves such problems, for instance, by, inter alia, forming fins withoptimized fin-widths for larger diode junction regions and lower diodeseries resistance resulting in higher current.

Methodology in accordance with embodiments of the present disclosureincludes forming fins over a substrate, separated from each other, eachfin having a lower portion and an upper portion. STI regions are formedover the substrate, between the lower portions of adjacent fins. Thelower and upper portions of each fin are implanted with a first-typedopant. A junction region is formed around a depletion region and alongexposed sidewalls and a top surface of the upper portion of each fin.Last, a contact is formed on exposed sidewalls and a top surface of eachjunction region.

Still other aspects, features, and technical effects will be readilyapparent to those skilled in this art from the following detaileddescription, wherein preferred embodiments are shown and described,simply by way of illustration of the best mode contemplated. Thedisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects. Accordingly, the drawings and description are to be regardedas illustrative in nature, and not as restrictive.

FIG. 1A illustrates a substrate 101 (e.g. p-type) and Fin-based RFdiodes including fins 105 separated from each other by STI regions 107over the substrate 101. Junction regions 109 may be formed on exposedsidewalls and the top surface of each fin 105. A contact layer 111 maybe formed on sidewalls and the top surface of each junction region 109.The line 1B-1B′ illustrates the cut-line for the cross-sectional viewsof the method of forming the Fin-based RF diodes of FIG. 1A, beginningwith FIG. 1B.

FIG. 1B illustrates the substrate 101 and fins 105 separated from eachother over the substrate 101. The fins 105 include a lower portion 113and an upper portion 115. The upper portion 115 of each fin 105 may beformed with a top surface 117 narrower than a bottom surface 119, forexample, by using spacer merging and etching processes.

In FIG. 1C, STI regions 107 are formed over the substrate 101 andbetween the lower portions 113 of adjacent fins 105.

As illustrated in FIG. 1D, the lower and upper portions, 113 and 115, ofeach fin 105 are implanted with a first-type dopant (e.g. a p-typedopant) such as boron, wherein the lower portions 113 may be implantedto a higher concentration level than the concentration level at theupper portions 115 of each fin 105. The doped lower portion may have aconcentration of 1e14 to 1e16, whereas the upper portion may have aconcentration of 1e12 to 1e14.

In FIG. 1E, a junction region 121 may be formed around a depletionregion 123 and along exposed sidewalls 125 and a top surface 127 of theupper portion 115 of each fin 105. The light doping in region 123 allowsdepleting to spread more readily. The junction may be formed by plasmadoping or low energy doping, e.g. at an energy of 0.1 to 0.5 KeV, with asecond-type dopant (e.g. an n-type dopant, such as phosphorous). Anactive depletion region 129 of current flow is formed between thedepletion region 123 and the lower portion 113 of each fin 105. Acapacitance in the depletion region 123 may be reduced by reducing asize of the depletion region 123. An effective depletion region, whichcan affect the capacitance, may depend on a base of active depletionregion 129. A complementary doping (with the first-type dopant being ann-type and the second-type dopant being a p-type) can be alternativelyused for P+/n type diode formation.

Merging of depletion region 123 from both sides of the junction canresult in a fixed narrow depletion region 123 even without doping of thejunction region 121. The effective area of the junction is twice theheight (h) 135 plus the width of the top (ft) 133. Forward currentincreases with junction area. Higher N+ doping in the junction area alsoincreases current. A higher drive current may be achieved by a having aSiGe depletion region 123. Depending on the N+ doping and a fin-width,the depletion region 123 may be depleted and non-depleted. In addition,the off-state capacitance, when the depletion region is merged is thewidth of the bottom (fb) 131.

For a planar diode, the junction width is about 48 nm and for aconventional fin based diode, it is about 13 nm. Thus, if, for example,the effective junction width, or the sum of two times the height (e.g.40 nm) and the top width (ft) (e.g. 6 nm), equals 86, the gain over aplanar diode is about two times and over a conventional fin-type diodeis about seven times at the current technology node, which increases asthe technologies are scaled down. Also, since the depletion width (d)can increase from, for example, 5 nm to 42 nm, and capacitance isproportional to 1/d, the device of FIG. 1A has a reduction incapacitance of about 8 times, assuming the junctions are close to thesurface.

With a reverse bias, the depletion region 123 in general grows evenfurther in lightly doped region, but its growth is limited by anotherregion growing from sidewalls 125. After merge, the depletion region 123may remain the same (e.g. not grow) irrespective of a forward or reversebias application. The depletion region 123 may have a fixed capacitancefor any given bias after a fixed bias voltage. A smaller depletionregion 123 may lead to a smaller capacitance as it depends upon the top133 to bottom 131 of the depletion region 123. In switching application,charge can be easily swept from on to off states. Active area of the cap(e.g. 2×125+127) depends upon the base 129 active region 131 of the capresulting in lower capacitance for a smaller area.

A narrower fin-width may result in an increase in parasitic resistance,which may influence performance characteristics of an RF diode. Anoptimum fin-width may be determined based on desired performancecharacteristics of an RF diode. Additionally, performance of the RFdiode may be further optimized by determining optimum doping parameters.A base region under the cap may have a higher doping level for a lowerparasitic resistance.

As illustrated in FIG. 1F, alternatively, the junction region 121 may beformed by forming a layer of silicide material 137 on the exposedsidewalls 125 and the top surface 127 of each fin 105. Titanium silicide(TiSi), nickel silicide (NiSi), tungsten silicide (WSi), etc. provideSchottky diode like features and significantly increase the diode speedas well as multiply the forward current.

As illustrated in FIG. 1G, in either of the cases described in FIGS. 1Eand 1F, a contact layer 139 (e.g. titanium-silicide) may be formed onexposed sidewalls and top surface of each junction region 121.

The embodiments of the present disclosure can achieve several technicaleffects including increasing the width of the diode depletion region(e.g. wider than a conventional diode) for lowering the capacitance.Also, the transition region from the on-state to the off-state showsfast switching from a high to a low capacitance (the capacitance acts asan RC delay). Furthermore, the embodiments enjoy utility in variousindustrial applications as, for example, microprocessors, smart phones,mobile phones, cellular handsets, set-top boxes, DVD recorders andplayers, automotive navigation, printers and peripherals, networking andtelecom equipment, gaming systems, digital cameras, or other devicesutilizing logic or high-voltage technology nodes. The present disclosuretherefore enjoys industrial applicability in any of various types ofhighly integrated semiconductor devices, including devices that use SRAMcells (e.g., liquid crystal display (LCD) drivers, digital processors,etc.)

In the preceding description, the present disclosure is described withreference to specifically exemplary embodiments thereof. It will,however, be evident that various modifications and changes may be madethereto without departing from the broader spirit and scope of thepresent disclosure, as set forth in the claims. The specification anddrawings are, accordingly, to be regarded as illustrative and not asrestrictive. It is understood that the present disclosure is capable ofusing various other combinations and embodiments and is capable of anychanges or modifications within the scope of the inventive concept asexpressed herein.

What is claimed is:
 1. A device comprising: fins over a substrate,separated from each other, each fin having a lower portion and an upperportion; shallow trench isolation (STI) regions over the substrate,between the lower portions of adjacent fins; the lower portion of eachfin implanted with a first-type dopant; the upper portion of each fin,above the STI region, implanted with the first-type dopant; a junctionregion around a depletion region and along exposed sidewalls and a topsurface of the upper portion of each fin; and a contact layer on a topsurface of each junction region.
 2. The device according to claim 1,wherein the first-type dopant comprises a p-type dopant.
 3. The deviceaccording to claim 2, wherein the first-type dopant comprises boron. 4.The device according to claim 1, wherein the lower portion of each finis implanted with the first-type dopant to a higher concentration levelthan the upper portion of each fin.
 5. The device according to claim 4,wherein the lower portion has a concentration of 1e14 to 1e16 and theupper portion has a concentration of 1e12 to 1e14.
 6. The deviceaccording to claim 1, wherein the upper portion of each fin has a topsurface narrower than a bottom surface.
 7. The device according to claim1, further comprising: an active depletion region between the depletionregion and the lower portion of each fin.
 8. The device according toclaim 1, wherein the junction region, including the exposed sidewallsand the top surface of each fin, is implanted with a diode cathodedopant.
 9. The device according to claim 8, wherein the diode cathodedopant comprises an n-type dopant.
 10. The device according to claim 9,wherein the n-type dopant comprises phosphorus.
 11. The device accordingto claim 1, wherein the junction region comprises a layer of silicidegate material on the exposed sidewalls and the top surface of each fin.12. The device according to claim 1, wherein the contact layer on thetop surface of each junction region comprises titanium silicide (TiSi).13. A device comprising: fins over a substrate, separated from eachother, each fin having a lower portion and an upper portion; shallowtrench isolation (STI) regions over the substrate, between the lowerportions of adjacent fins; the lower portion of each fin implanted witha first-type dopant; the upper portion of each fin, above the STIregion, implanted with the first-type dopant; a depletion region in theupper portion of each fin; a junction region around the depletion regionand along exposed sidewalls and a top surface of the upper portion ofeach fin; an active depletion region between the depletion region andthe lower portion of each fin; and a titanium silicide (TiSi) layer onexposed sidewalls and top surface of the junction region.
 14. The deviceaccording to claim 13, wherein the lower portion of each fin isimplanted with the first-type dopant to a higher concentration levelthan the upper portion of each fin.
 15. The device according to claim14, wherein the lower portion has a concentration of 1e14 to 1e16 andthe upper portion has a concentration of 1e12 to 1e14.
 16. The deviceaccording to claim 13, wherein the upper portion of each fin has a topsurface narrower than a bottom surface.
 17. The device according toclaim 13, wherein the junction region over the exposed sidewalls and topsurface of the upper portion of the plurality of fins is an effectivearea.
 18. The device of claim 13, wherein the junction region has awidth of 48 nanometer (nm) for a planar diode and 13 nm for aconventional fin based diode.
 19. A device comprising: fins over asubstrate, separated from each other, each fin having a lower portionand an upper portion, and wherein the upper portion of each fin has atop surface narrower than a bottom surface; shallow trench isolation(STI) regions over the substrate, between the lower portions of adjacentfins; the lower portion of each fin implanted with boron (B) at aconcentration of 1e14 to 1e16; the upper portion of each fin, above theSTI region, implanted with B at a concentration of 1e12 to 1e14; ajunction region around a depletion region and along exposed sidewallsand a top surface of the upper portion of each fin; and a titaniumsilicide (TiSi) layer on exposed sidewalls and top surface of thejunction region.
 20. The device according to claim 19, wherein thejunction region comprises a layer of silicide gate material implantedwith a diode cathode dopant.